Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs.

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Bibliographic Details
Title: Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs.
Authors: Lubberts, G., Burkey, B. C.
Source: Solid-State Electronics; January 1979, Vol. 22, p47-54, 8p
Database: Applied Science & Technology Source
Description
ISSN:00381101