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Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams.

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Title: Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams.
Authors: Haynes, T. E., Zuhr, R. A., Pennycook, S. J., Appleton, B. R.
Source: Applied Physics Letters; 4/10/1989, Vol. 54 Issue 15, p1439, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9830750
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams.
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  Data: <searchLink fieldCode="AU" term="%22Haynes%2C+T%2E+E%2E%22">Haynes, T. E.</searchLink><br /><searchLink fieldCode="AU" term="%22Zuhr%2C+R%2E+A%2E%22">Zuhr, R. A.</searchLink><br /><searchLink fieldCode="AU" term="%22Pennycook%2C+S%2E+J%2E%22">Pennycook, S. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Appleton%2C+B%2E+R%2E%22">Appleton, B. R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 4/10/1989, Vol. 54 Issue 15, p1439, 3p
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        Value: 10.1063/1.100690
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      – Code: eng
        Text: English
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        StartPage: 1439
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      – TitleFull: Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams.
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            NameFull: Haynes, T. E.
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            NameFull: Zuhr, R. A.
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            NameFull: Pennycook, S. J.
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              Text: 4/10/1989
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              Y: 1989
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