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High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.

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Title: High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.
Authors: Yew, Tri-Rung, Reif, Rafael
Source: Applied Physics Letters; 5/21/1990, Vol. 56 Issue 21, p2105, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9834130
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=9834130
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        Value: 10.1063/1.103232
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2105
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      – TitleFull: High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.
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              Text: 5/21/1990
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              Y: 1990
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